Öz
Anahtar Kelimeler
Comparative basic electrical parameters; I-V features and basic electrical parameters The sources of interface traps Comparative basic electrical parameters I-V features and basic electrical parameters The sources of interface traps
Kaynakça
- [1] Sze, S. M., Physics of Semiconductor Devices,2nd ed., New York, Wiley, (1981).
- [2] Tung, R. T., “Electron transport at metal-semiconductor interfaces: General theory” Phys. Rev. B, 45(23): 13509-13523, (1992).
- [3] Svensson, B.G., Pearton, S.J., Jagadish, C., Oxide Semiconductors, Semiconductors and Semimetals, Elsevier & Academic Press, Amsterdam, (2013).
- [4] Hwang, J.D., Kung, C.Y., Lin, Y. L., “Non-surface-treated Au/ZnO Schottky diodes using pre-annealed hydrothermal or sol-gel seed layer”, IEEE Trans Nanotechnology, 12(1), 35–39, (2013).
- [5] Altındal Yerişkin, S., “Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms (CMs) in the Au/n-Si (MS) structures at room temperature”, Journal of the Institute of Science and Technology, 9(2): 835-846, (2019).
- [6] Jagadish, C., Pearton, S. J., Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties, and Applications. Elsevier, Amsterdam, (2006).
- [7] Caglar, Y., Caglar, M., Ilican, S., Ates, A., “Morphological, optical and electrical properties of CdZnO films prepared by sol–gel method”, Journal of Physics D Applied Physics, 42(6): 06542, (2009).
- [8] Norde, H., “A modified forward I-V plot for Schottky diodes with high series resistance”, Journal of Applied Physics 50, 5052-5053, (1979).
- [9] Cheung, S. K., Cheung, N. W., “Extraction of Schottky diode parameters from forward current‐voltage characteristics”, Applied Physics Letters, 49(2), 85-87, (1998).
- [10] Card, H. C., Rhoderick, E. H., “Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes”, Journal of PhysicsD, Applied Physics, 4, (1971).
- [11] Sharma, B. L., Metal-semiconductor Schottky Barrier Junctions and Their Applications, Plenum Press, New York, (1984).
- [12] Mishra, Y.K., “Adelung R, ZnO tetrapodmaterials for functional applications”, Materials Today, 21(6): 631-650, (2018).
- [13] Yan, M., Lane, M., Kannewurf, C. R., Chang, R. P. H., “Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition”, Physics Letters, 78, 2342, (2001).
- [14] Yang, Z., Li, L., Zuo, Z., Liu, J. L., “Temperature-dependent photoluminescence of CdZnO thin films grown by molecular-beam epitaxy”, Journal of Crystal Growth, 312(1): 68-72, (2009).
Voltage Dependent Profiles of the Surface States and Series Resistance (Rs) in the Al-(Cd:ZnO)-pSi Schottky Diodes (SDs) Utilizing Voltage-Current (IV) Characteristics
Öz
In this work, the main electronic parameters of the performed Al-(CdxZn1-xO)-pSi Metal/Interface-layer/Semiconductor (MIS) type Schottky Diodes (SDs) were investigated by utilizing IV characteristics at 300 K. The (CdxZn1-xO) interfacial layer was grown on the pSi wafer by utilizing the sol-gel technique. Ideality-factor(n), potential barrier ФBo, Rs, shunt resistance (Rsh), and rectification rate (RR) (Iforward/Ireverse) values were calculated based on thermionic emission (TE) theory and Cheung function between -4.5V and 4.5V. There parameters also varied for the samples with different doping ratios. Energy-dependent surface state profiles of them were also extracted from the forward bias IV data, and their magnitude was found on the order of 1012eV-1.cm-2 which is very appropriate for the MIS type SD. The values of n, barrier height (BH), ФBo, and RR changed from 4.347, 0.582 eV, 5.74x103 to 5.293, 0.607 eV, 2.83x106. These results show that electronic parameters of these SDs are a strong functions of voltage, calculation method, and the doping rate of the Cadminium (Cd) interfacial layer. The best ratio for Cd: ZnO was determined to be 30%; therefore, this interfacial layer may be used instead of traditional insulator layers to enhance the quality of Metal/Semiconductor (MS) type SDs.
Anahtar Kelimeler
Comparative basic electrical parameters I-V features and basic electrical parameters The sources of interface traps
Kaynakça
- [1] Sze, S. M., Physics of Semiconductor Devices,2nd ed., New York, Wiley, (1981).
- [2] Tung, R. T., “Electron transport at metal-semiconductor interfaces: General theory” Phys. Rev. B, 45(23): 13509-13523, (1992).
- [3] Svensson, B.G., Pearton, S.J., Jagadish, C., Oxide Semiconductors, Semiconductors and Semimetals, Elsevier & Academic Press, Amsterdam, (2013).
- [4] Hwang, J.D., Kung, C.Y., Lin, Y. L., “Non-surface-treated Au/ZnO Schottky diodes using pre-annealed hydrothermal or sol-gel seed layer”, IEEE Trans Nanotechnology, 12(1), 35–39, (2013).
- [5] Altındal Yerişkin, S., “Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms (CMs) in the Au/n-Si (MS) structures at room temperature”, Journal of the Institute of Science and Technology, 9(2): 835-846, (2019).
- [6] Jagadish, C., Pearton, S. J., Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties, and Applications. Elsevier, Amsterdam, (2006).
- [7] Caglar, Y., Caglar, M., Ilican, S., Ates, A., “Morphological, optical and electrical properties of CdZnO films prepared by sol–gel method”, Journal of Physics D Applied Physics, 42(6): 06542, (2009).
- [8] Norde, H., “A modified forward I-V plot for Schottky diodes with high series resistance”, Journal of Applied Physics 50, 5052-5053, (1979).
- [9] Cheung, S. K., Cheung, N. W., “Extraction of Schottky diode parameters from forward current‐voltage characteristics”, Applied Physics Letters, 49(2), 85-87, (1998).
- [10] Card, H. C., Rhoderick, E. H., “Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes”, Journal of PhysicsD, Applied Physics, 4, (1971).
- [11] Sharma, B. L., Metal-semiconductor Schottky Barrier Junctions and Their Applications, Plenum Press, New York, (1984).
- [12] Mishra, Y.K., “Adelung R, ZnO tetrapodmaterials for functional applications”, Materials Today, 21(6): 631-650, (2018).
- [13] Yan, M., Lane, M., Kannewurf, C. R., Chang, R. P. H., “Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition”, Physics Letters, 78, 2342, (2001).
- [14] Yang, Z., Li, L., Zuo, Z., Liu, J. L., “Temperature-dependent photoluminescence of CdZnO thin films grown by molecular-beam epitaxy”, Journal of Crystal Growth, 312(1): 68-72, (2009).
Ayrıntılar
| Birincil Dil | İngilizce |
|---|---|
| Konular | Mühendislik |
| Bölüm | Physics |
| Yazarlar | |
| Erken Görünüm Tarihi | 2 Mayıs 2023 |
| Yayımlanma Tarihi | 1 Mart 2024 |
| Yayımlandığı Sayı | Yıl 2024 Cilt: 37 Sayı: 1 |